AO4578 Datasheet, PDF (1/5 Pages) shenzhen wanhexing Electronics Co.,Ltd – 30V N-Channel MOSFET

AO4578
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R_DS(ON) at 4.5V V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
30V
20A
< 5.7mΩ
< 9mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R_g Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.01mH ^C
V_DS Spike
Power Dissipation ^B
100ns
T_A=25°C
T_A=70°C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
V_SPIKE
P_D
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
30
±20
20
15
120
40
8
36
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: August 2013
www.aosmd.com
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