AO4576 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AO4576
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R_g Tested
30V
20A
< 5.8mΩ
< 9.8mΩ
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_A=25°C
Power Dissipation ^B T_A=100°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
20
12
144
25
31
36
3.1
1.2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov. 2012
www.aosmd.com
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