AO4449 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4449
30V P-Channel MOSFET
General Description
Product Summary
The AO4449 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS = -4.5V)
100% UIS Tested
100% R_g Tested
-30V
-7A
< 34mΩ
< 54mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
-7
-5.5
Pulsed Drain Current ^C
I_DM
-40
Avalanche Current ^C
I_AS, I_AR
23
Avalanche energy L=0.1mH ^C
E_AS, E_AR
26
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Nov 2011
www.aosmd.com
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