AO4447 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4447
30V P-Channel MOSFET
General Description
The AO4447 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected.
Product Summary
V_DS (V) = -30V
I_D = -15 A (V_GS = -10V)
Max R_DS(ON) < 7.5mΩ (V_GS = -10V)
Max R_DS(ON) < 12mΩ (V_GS = -4V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3mH ^G
E_AR
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-15
-13.6
-60
40
240
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
26
50
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
14
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com