AO4441 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4441
60V P-Channel MOSFET
General Description
Product Summary
The AO4441 uses advanced trench technology to provide
excellent R_DS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS = -4.5V)
-60V
-4A
< 100mΩ
< 130mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
-60
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^A
T_A=25°C
T_A=70°C
I_D
-4
-3.1
Pulsed Drain Current ^B
I_DM
-20
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
24
54
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: August 2013
www.aosmd.com
Page 1 of 5