AO4423 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO4423
30V P-Channel MOSFET
General Description
The AO4423 uses advanced trench technology to provide
excellent R_DS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
V_DS (V) = -30V
I_D = -17A
R_DS(ON) < 6.2mΩ
R_DS(ON) < 7.2mΩ
(V_GS = -20V)
(V_GS = -20V)
(V_GS = -10V)
* RoHS and Halogen-Free Compliant
ESD Protected
100% UIS tested
100% Rg tested (note *)
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^AF
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
G
Maximum
-30
±25
-17
-14
-182
3.1
2
-55 to 150
Typ
26
50
14
D
S
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.11.0 June 2013
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