AO4407A Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
* RoHS and Halogen-Free Complaint
Product Summary
V_DS = -30V
I_D = -12A
(V_GS = -20V)
R_DS(ON) < 11mΩ (V_GS = -20V)
R_DS(ON) < 13mΩ (V_GS = -10V)
R_DS(ON) < 17mΩ (V_GS = -6V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3mH ^G
E_AR
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-12
-10
-60
-26
101
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
32
60
Maximum Junction-to-Lead ^C
Steady State
R_θJL
17
Max
40
75
24
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev.11.0 June 2013
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