AO4406A Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
30V
13A
< 11.5mΩ
< 15.5mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
13
10.4
100
22
24
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: Nov. 2011
www.aosmd.com
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