AO4403 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4403
30V P-Channel MOSFET
General Description
Product Summary
The AO4403 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS =-2.5V)
100% UIS Tested
100% R_g Tested
-30V
-6A
< 48mΩ
< 57mΩ
< 80mΩ
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±12
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
-6
-5
Pulsed Drain Current ^C
I_DM
-30
Avalanche Current ^C
I_AS, I_AR
18
Avalanche energy L=0.1mH ^C
E_AS, E_AR
16
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 7: Mar. 2011
www.aosmd.com
Page 1 of 5