AO4310 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 36V N-Channel MOSFET

AO4310
36V N-Channel MOSFET
General Description
The AO4310 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R_DS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
36V
27A
< 3.1mΩ
< 4.2mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
36
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
27
22
Pulsed Drain Current ^C
I_DM
390
Avalanche Current ^C
I_AS, I_AR
67
Avalanche energy L=0.1mH ^C
E_AS, E_AR
224
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
3.6
2.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
27
52
Maximum Junction-to-Lead
Steady-State
R_θJL
10
Max
35
65
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
www.aosmd.com
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