MBT3906DW Datasheet, PDF (5/6 Pages) List of Unclassifed Manufacturers – Dual General Purpose Transistor PNP+PNP Silicon

MBT3906DW
TYPICAL STATIC CHARACTERISTICS
2.0
TJ=+125 C
+25 C
1.0
0.7
-55 C
0.5
VCE=10V
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50
70 100
200
IC COLLECTOR CURRENT (mA)
Figurer 13. DC Current Gain
1.0
0.8
IC=1.0mA
0.6
10mA
30mA
0.4
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB BASE CURRENT (mA)
Figure 14. Collector Saturation Region
TJ=25 C
100mA
2.0
3.0
5.0 7.0
10
1.0
TJ=25 C
0.8
0.6
VBE(sat) @ IC/IB=10
VBE(sat) @VCE=1.0V
0.4
VCE(sat) @ IC/IB=10
0.2
0
10
20 50
10
20
50
100
200
IC COLLECTOR CURRENT (mA)
Figure 15. "ON" Voltages
1.0
0.5
qVC FOR VCE(sat)
0
-0.5
-1.0
-1.5
qVB FOR VBE(sat)
+25 C TO +125 C
-55 C TO +25 C
+25 C TO +125 C
-55 C TO +25 C
-2.0
0
20 40 60 80 100 120 140 160 180 200
IC COLLECTOR CURRENT (mA)
Figure 16.Temperature Coefficients
WEITRON
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