WT7822AM Datasheet, PDF (4/6 Pages) Weitron Technology – Surface Mount N-Channel Enhancement Mode MOSFET

WT7822AM
WE ITR ON
42
35
28
21
14
7
VDS=10V
0
0
5
10
15
20
25
IDS, Drain-Source Current (A)
Fig.7 Transconductance Variation
with Drain Current
20
10
1
TJ=25 C
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, Body Diode Forward Voltage (V)
Fig.8 Body Diode Forward Voltage
Variation with Source Current
5
VDS=16V
4 ID=14A
3
2
1
0
0 6 12 18 24 30 36 42 48
Qg, Total Gate Charge (nC)
Fig.9 Gate Charge
60
10ms
10
100ms
1s
1
DC
0.1 ^VGS=10V
Single Pulse
Tc=25 C
0.03
0.1
1
10 20 50
VDS, Drain-Source Voltage (V)
Fig.10 Maximum Safe Operating Area
V DD
RL
V IN
D
V OUT
VGS
R GEN
G
S
FIG.11 Switching Test Circuit
ton
toff
td(on)
tr td(off)
tf
5
90%
90%
V OUT
10% INVERTED
10%
V IN
10%
90%
50%
50%
PULSE WIDTH
FIG.12 Switching Waveforms
WEITRON
4/6
http://www.weitron.com.tw
02-Aug-05