WT2301 Datasheet, PDF (2/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode MOSFET

WT-2301
Electrical Characteristics
Characteristic
Static ⁽²⁾
Drain-Source Breakdown Voltage
V_GS=0V, ID=-250 uA
Gate-Source Threshold Voltage
V_DS=V_GS, ID=-250 uA
Gate-Source Leakage Current
V_DS=0V, V_GS=-+10V
Zero Gate Voltage Drain Current
V_DS=-16V, V_GS=0V
Drain-Source On-Resistance
V_GS=-4.5V, I_D=-4.0A
V_GS=-2.5V, I_D=-2.0A
V_GS=-1.8V, I_D=-1.0A
On-State Drain Current
V_DS=-5V, V_GS=-4.5A
(TA=25 C Unless otherwise noted)
Symbol
Min
Typ
V_(BR)DSS
-20
V_{GS (th)}
-0.6
I_GSS
-
I_DSS
-
r_{DS (on)}
-
-
-
I_D(on)
-20
-
-0.85
-
-
50
70
95
-
Forward Transconductance
V_DS=-5V, I_D=-5A
g_fs
5
-
Dynamic⁽³⁾
Input Capacitance
V_DS=-15V, V_GS=0V, f=1MHZ
Output Capacitance
V_DS=-15V, V_GS=0V, f=1MHZ
Reverse Transfer Capacitance
V_DS=-15V, V_GS=0V, f=1MHZ
C_iss
-
926
C_oss
-
183
C_rss
-
141
Switching ⁽³⁾
Turn-On Time
V_GS =-4.5V,V_DD =-10V, I_D=-1A, R _L=10 Ω ,R_GEN=6Ω
t_d(on)
-
13.9
Rise Time
V_GS =-4.5V,V_DD =-10V, I_D=-1A, R _L=10 Ω ,R_GEN=6Ω
tr
-
17.6
Turn-Off Time
V_GS =-4.5V,V_DD =-10V, I_D=-1A, R _L=10 Ω ,R_GEN=6Ω
t_{d(off )}
-
87.7
Fall Time
V_GS =-4.5V,V_DD =-10V, I_D=-1A, R _L=10 Ω ,R_GEN=6Ω
tf
-
53.9
Total Gate Charge
V_DS=-10V, I_D=-3A, VGS=-4.5V
Qg
-
11.9
Gate-Source Charge
V_DS=-10V, I_D=-3A, VGS=-4.5V
Gate-Drain Charge
V_DS=-10V, I_D=-3A, VGS=-4.5V
Qgs
-
1.96
Qgd
-
3.49
Drain-Source Diode Forward Voltage
V_GS=0V, I_S=-1.25A
V_SD
-
-0.795
Note: _{1. Surface Mounted on FR4 Board t} <_ _10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle ^<_ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
Max
-
-1.5
-+100
1
60
80
105
-
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
V
V
nA
uA
mΩ
A
S
PF
nS
nS
nS
nS
nc
nc
nc
V