W4601DW Datasheet, PDF (2/7 Pages) Weitron Technology – Dual Epitaxial Planer Transistor

W4601DW
Electrical Characteristics (TA=25 C unless otherwise noted)
Characteristics
Symbol
Min
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC = 1.0mA)
(lC = -1.0mA)
Collector-Base Breakdown Voltage
(lC = 50 µA)
(lC = -50 µA)
Emitter-Base Breakdown Voltage
(lE = 50 µA)
(lE = -50 µA)
Collector Cutoff Current
(VCB = 60 V)
(VCB = -60 V)
Emitter Cutoff Current
(VEB = 7.0V)
(VEB = -7.0V)
NPN
V(BR)CEO
50
PNP
-50
NPN
V(BR)CBO
60
PNP
-60
NPN
V(BR)EBO
6.0
PNP
-6.0
NPN
PNP
lCBO
-
-
NPN
lEBO
-
PNP
-
On Characteristics
DC Current Gain
(lC = 1.0 mA, VCE = 6.0V)
(lC = -1.0 mA, VCE = -6.0V)
NPN
PNP
Collector-Emitter Saturation Voltage
(lC = 50 mA, lB = 5.0mA)
(lC = 50 mA, lB = -5.0mA)
NPN
PNP
hFE
120
120
VCE(sat)
-
-
Small-Signal Characteristics
Current-Gain-Bandwidth Product
(VCE = 12.0 V, lE = -2.0mA, f = 100MHz) NPN
(VCE = -12.0 V, lE = 2.0mA, f = 300MHz) PNP
fT
-
-
Output Capacitance
(VCE = 12.0V, f = 1.0MHz)
(VCB = -12.0V, f = 1.0MHz)
NPN
Cobo
-
PNP
-
Typ
Max Unit
-
-
V
-
-
-
-
V
-
-
-
-
V
-
-
-
0.1
mA
-
-0.1
-
0.1
mA
-
-0.1
-
560
-
560
V
-
0.4
-
-0.5
180
-
MHz
140
-
2
3.5
Pf
4
5
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