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| MSB709 Datasheet, PDF (2/6 Pages) E-Tech Electronics LTD – PNP General Purpose Amplifier Transistor Surface Mount | |||
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MSB709
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
IC = -2.0mA, IE = 0A
Collector-Base Breakdown Voltage
IC = -10µA, IB = 0A
Emitter-Base Breakdown Voltage
IE= 10µA, IC=0
Collector Cutoï¬ Current
VCB = -45V, IC = 0A
Emitter Cutoï¬ Current
VEB = -10V, IC = 0A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
Min
-45
-60
-7.0
-
-
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
-
0.1
µA
-
0.1
µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
IC = -100mA, IB = -10mA
VCE(sat)
-
-
DC Current Transfer Ration1
VCE = -10V, IC = -20mA
1.Pulse Test : Pulse Width ⤠300µs, D.C. ⤠2%
hFE
210
-
-0.5
V
340
V
WEITRON
2/6
http://www.weitron.com.tw
18-Sep-06
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