MMUN2111 Datasheet, PDF (2/6 Pages) Weitron Technology – Bias Resistor Transistor PNP Silicon

MMUN2111 Series
WE ITR ON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol Min
Typ _Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC=2.0mA, IB=0)
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
Collector-Base Cutoff Voltage
(V_CB=50 V, IE =0)
Collector-Emitter Cutoff Current
(VCE=50V, IB=0)
Emitter-Base Cutoff Current
(VEB=6.0V, IC=0)
MMUN2111
MMUN2112
MMUN2113
MMUN2114
MMUN2115
MMUN2116
MMUN2130
MMUN2131
MMUN2132
MMUN2133
MMUN2134
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
ICEO
-
IEBO
-
-
-
-
-
-
-
-
-
-
-
-
-
V
-
-
V
-
100
nA
-
500
nA
-
-
0.5
mA
0.2
-
0.1
-
0.2
-
0.9
-
1.9
-
4.3
-
2.3
-
1.5
-
0.18
-
0.13
On Characteristics
Collector-Emitter Saturation Voltage
(IC=10mA, IB =0.3mA)
(IC=10mA, IB=5mA) MMUN2130/MMUN2131
(IC=10mA, IB =1mA) _{MMUN2115/MMUN2116}
MMUN2132/MMUN2133/MMUN2134
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
VCE(sat)
-
-
0.25
Vdc
WEITRON
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