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| MMBTA42_06 Datasheet, PDF (2/4 Pages) Weitron Technology – High-Voltage NPN Transistor Surface Mount | |||
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MMBTA42
MMBTA43
WEITRON
Electrical Characteristics (TA=25°C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max Unit
Off Characteristics3
Collector-Emitter Breakdown Voltage
(IC=1.0mA, IB=0)
MMBTA42
MMBTA43
V(BR)CEO
300
200
-
-
-
-
V
Collector-Base Breakdown Voltage
(IC=10μA, IE=0)
Emitter-Base Breakdown Voltage
(IE=100μA, IC=0)
Collector Cutoï¬ Current
(VCB=200V, IE=0)
(VCB=160V, IE=0)
Emitter Cutoï¬ Current
(VEB=6.0V, IC=0)
(VEB=4.0V, IC=0)
MMBTA42
MMBTA43
MMBTA42
MMBTA43
V(BR)CBO
300
200
V(BR)EBO
6.0
6.0
ICBO
-
-
IEBO
-
-
-
-
V
-
-
-
-
V
-
-
-
-
0.1
0.1
μA
-
0.1
μA
-
0.1
On Characteristics3
DC Current Gain
(IC=1.0mA, VCE=10V)
(IC=10mA, VCE=10V)
(IC=30mA, VCE=10V)
Collector-Emitter Saturation Voltage
(IC=20mA, IB=2.0mA)
Base-Emitter Saturation Voltage
(IC=10mA,IB=0.5mA)
(IC=100mA,IB=5.0mA)
25
-
-
hFE
40
-
-
-
40
-
-
VCE(sat)
-
-
0.5
V
VBE(sat)
-
-
0.9
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC=10mA, VCE=20V, f=100MHz)
Output Capacitance
(VCB=20V, IE=0, f=1.0MHz)
MMBTA42
MMBTA43
3. Pulse Test : Pulse Width 300µS, Duty Cycle ⤠2.0%.
fT
50
Ccb
-
-
-
MHz
-
3.0
4.0
pF
WEITRON
2/4
http://www.weitron.com.tw
15-Dec-06
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