MMBD4448HAQW Datasheet, PDF (2/4 Pages) Weitron Technology – Surface Mount Switching Multi-Chip Diode Array

MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Maximum Ratings@ T_A= 25°C unless otherwise specified
Characteristic
Symbol
Non-Repetitive Peak Reverse Voltage
V_RM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
V_R
RMS Reverse Voltage
V_R(RMS)
Forward Continuous Current (Note 1)
I_FM
Average Rectified Output Current (Note 1)
I_O
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
@ t = 1.0s
I_FSM
Power Dissipation (Note 1)
P_D
Thermal Resistant Junction to Ambient Air (Note 1)
R_θJA
Operating Temperature Range
T_j
Storage Temperature Range
T_STG
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Value
100
80
57
500
250
4.0
2.0
200
625
+150
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Symbol
Min
Reverse Breakdown Voltage (Note 2)
I_R = 100µA
V_(BR)R
80
Forward Voltage (Note 2)
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
0.62
V_F
-
-
-
Reverse Current (Note 2)
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
I_R
-
Total Capacitance
VR = 6V, f = 1.0MHz
C_T
-
Reverse Recovery Time
VR = 6V, IF= 5mA
Trr
-
Notes:2. Short duration test pulse used to minimize self-heating effect.
WEITRON
http://www.weitron.com.tw
2/4
Max
-
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
µA
µA
nA
pF
ns
04-Jan-06