MBT3946DW Datasheet, PDF (2/11 Pages) List of Unclassifed Manufacturers – Dual General Purpose Transistor

MBT3946DW
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽²⁾
(IC=1.0mAdc.IB=0) (NPN)
(IC=-1.0mAdc.IB=0) (PNP)
V(BR)CEO
40
-
-40
-
Collector-Base Breakdown Voltage
(IC=10 µAdc, IE=0) (NPN)
(IC=-10 µAdc, IE=0) (PNP)
V(BR)CBO
60
-
-40
-
Emitter-Base Breakdown Voltage
(IE=10 µAdc, IC=0) (NPN)
(IE=-10 µAdc, IC=0) _(PNP)
V(BR)EBO
6.0
-
-5.0
-
Base Cutoff Current
(VCE=30 Vdc, VEB =3.0 Vdc) (NPN)
(VCE=-30 Vdc, VEB =-3.0 Vdc) (PNP)
IBL
-
50
-
-50
Collector Cutoff Current
(VCE=30Vdc, VEB=3.0Vdc) (NPN)
(VCE=-30Vdc, VEB=-3.0Vdc) (PNP)
ICEX
-
-
50
-50
1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint.
2. Pulse Test:Pulse Width ^<=300 µS, Duty Cycle ^<=2.0%.
Vdc
Vdc
Vdc
nAdc
nAdc
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
On Characteristics ⁽²⁾
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc) (NPN)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 50 mAdc, VCE= 1.0Vdc)
(IC= 100 mAdc, VCE= 1.0Vdc)
(IC= -0.1 mAdc, VCE=-1.0Vdc) (PNP)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= -50 mAdc, VCE= -1.0Vdc)
(IC= -100 mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0mAdc) _(NPN)
(IC= 50 mAdc, IB= 5.0mAdc)
(IC= -10 mAdc, IB= -1.0mAdc) (PNP)
(IC=-50 mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc) ^(NPN)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= -10 mAdc, IB= -1.0 mAdc) (PNP)
(IC= -50 mAdc, IB= -5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
40
70
100
60
30
60
80
100
60
30
-
-
-
-
0.65
-
-0.65
-
Max
Unit
-
-
300
-
-
-
-
-
300
-
-
-
0.20
0.30
Vdc
-0.25
-0.40
0.85
0.95
Vdc
-0.85
-0.95
WEITRON
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