KTD1898 Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

KTD1898
ELECTRICAL CHARACTERISTICS (Ta=25^%C unless otherwise noted ) ^(Countinued)
Parameter
Symbol Min Typ Max Unit
DC Current Gain (V_CE=3V, Ic=500mA)
h _FE
70 - 400 _-
Collector-Emitter Saturation Voltage (Ic=500mA, I_B =20mA)
VCE(sat) _{- - 0.4 V}
Transition Frequency (V_CE=10V, Ic=50mA, f=100MHz)
fT
- 100 - MHz
Output Capacitance (V_CB=10V, I _E=0A, f=1MHz)
Cob
- 20 - pF
CLASSIFICATION OF hFE
Marking
ZO
Rank
O
Range
70-140
ZY
Y
120-240
ZG
GR
200-400
ELECTRICAL CHARACTERISTIC CURVES
1000
100
T a=25°C
V C E =5V
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
B AS E T O E MIT T E R VOLT AG E : VBE (V )
FIG.1 Grounded Emitter Propagation
Characteristics
T a=25°C
1.0
6mA
5mA
0.8
4mA
3mA
0.6
2mA
0.4
1mA
0.2
0
0
2
4
68
I B =0 mA
10
C OLLE C TOR TO E MITTE R VOLTAG E : VCE (V )
FIG.2 Grounded Emitter Output
Characteristics
WEITRON
http://www.weitron.com.tw