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| FMMT593 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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FMMT593
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol Min
Typ
On Characteristics (1)
DC Current Gain
VCE= -5.0V, IC= -1.0mA
VCE= -5.0V, IC= -250mA
VCE= -5.0V, IC= -0.5A
VCE= -5.0V, IC= -1.0A
Collector-Emitter Saturation Voltage
IC = -250mA, IB = -25mA
IC = -0.5A, IB = -50mA
Base-Emitter Saturation Voltage
IC = -0.5A, IB = -50mA
Base-Emitter Voltage
VCE = -5.0V, IC = -1mA
hFE1
100
-
hFE2
100
-
hFE3
100
-
hFE4
50
-
VCE(sat)
-
-
VBE(sat)
-
-
VBE(on)
-
-
Max
Unit
-
-
300
-
-
-0.2
V
-0.3
-1.1
V
-1.0
V
Small-signal Characteristics
Transition Frequency
VCE = -10V, IC = -50mA, f = 100MHz
fT
150
-
Output Capacitance
VCB = -10V, f = 1.0MHz
Cob
-
-
1. Measured under pulsed conditions, Pulse width = 300µs, Duty cycle ⤠2%.
-
MHz
5
pF
WEITRON
2/4
http://www.weitron.com.tw
06-May-10
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