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| BD233 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications | |||
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BD233/235/237
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
IC = 100µA, IE = 0
BD233
45
BD235
V(BR)CBO
60
BD237
100
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
BD233
45
BD235
V(BR)CEO
60
BD237
80
Emitter-Base Breakdown Voltage
IC = 0, IE = 100µA
V(BR)EBO
5.0
Collector Cutoï¬ Current
VCB = 45V, IE=0
VCB = 60V, IE=0
BD233
BD235
ICBO
-
VCB = 100V, IE=0
BD237
Emitter Cutoï¬ Current
VEB = 5.0V, IC=0
IEBO
-
-
V
-
V
-
V
100
µA
1.0
mA
ON CHARACTERISTICS
DC Current Gain
VCE = 2.0V, IC = 150mA
VCE = 2.0V, IC = 1.0A
Collector-Emitter Saturation Voltage
IC = 1.0A, IB = 100mA
Transition frequency
VCE = 10V, IC = 250mA, f = 10MHz
hFE(1)
40
hFE(2)
25
VCE(sat)
-
fT
3.0
-
-
0.6
V
-
MHz
WEITRON
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