BAS70W Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70W/BAS70W-04
BAS70W-05/BAS70W-06
Maximum Ratings (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRRM
VR
VR(RMS)
Forward Continuous Current ⁽¹⁾
VR
Non-Repetitive Peak Forward
Surge Current @ tp 1.0s
IFSM
Value
70
49
70
100
Power Dissipation ⁽¹⁾
Pd
200
Thermal Resistance Junction
to Ambient Air
Operating Junction Temperure
Range
RθJA
Tj
625
-55 to + 150
Storage Temperature Range
T_STG
-65 to + 150
Unit
V
V
mA
mA
mA
KM
C
C
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR=10uA)
Forward Voltage
IF=1.0mA
IF=15mA
Total Capacitance
(VR=0V, f=1.0MHz)
V(BR)R
70
VF
CT
Max
0.41
1.00
2
Unit
Volts
Volts
PF
Reverse Leakage
VR=50V
IR
0.1
uAdc
Reverse Recover Time
IF=IR =10mA, IR(Rec)=1.0mA
Trr
5.0
nS
Device Marking
Item
BAS70W
BAS70W-05
Marking
K73
K75
Eqivalent Circuit diagram
3
1
3
1
2
BAS70W-06
K76
BAS70W-04
K74
3
1
2
3
1
2
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Test period 300us.
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