BAS70 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70/BAS70-04
BAS70-05/BAS70-06
Maximum Ratings (TJ=125 C Unless otherwise noted)
Characteristic
Reverse Voltage
Average Rectifier
Forward Current
Peak Repetitive
Forward Current
Rated VR, Square Wave,20KHz
Operating Junction
Temperature Range
Symbol
VR
IF(AV)
IFRM
TJ
Value
70
200
200
-55 to +125
Storage Temperature Range
Tstg
-55 to +150
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR=100µA)
V(BR)R
70
Forward Voltage
IF=1.0mA
VF
IF=15mA
Total Capacitance
(VR=0V, f=1.0MHz)
CT
Max
0.41
1.00
2
Unit
Volts
mA
mA
C
C
Unit
Volts
Volts
PF
Reverse Leakage
VR=50V
Reverse Recover Time
IF=IR =10mA, IR(Rec)=1.0mA
Device Marking
Item
BAS70
BAS70-05
BAS70-06
BAS70-04
IR
0.1
µAdc
Trr
5.0
nS
Marking
73
75
76
74
Eqivalent Circuit diagram
3
1
3
1
2
3
1
2
3
1
2
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