BAS40WS Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY DIODE

BAS40WS
Maximum Ratings (TA=25˚C Unless otherwise noted)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Power Dissipation (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
I_FM
P_d
I_FSM
R _JA
T_j
T_STG
Value
40
200
350
600
357
-55 to +125
-65 to +150
Unit
V
mA
mW
mA
C/W
C
C
Electrical Characteristics (TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
Reverse Breakdown Voltag e
I_R= 10 A
V_(BR)R
40
—
—
V
Forward Voltage
t_p < 300 s, I_F = 1.0mA
t_p < 300 s, I_F = 40mA
V_F
—
—
380
1000
mV
Reverse Leakage Current
t_p < 300 s, V_R = 30V
I_R
—
20
200
nA
Junction Capacitance
V_R = 0V, f =1.0MHz
C_j
—
4.0
5.0
pF
Reverse Recovery Time
I_F = I_R = 10mA to I_R = 1.0mA,
R_L = 100
t_rr
—
—
5.0
ns
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
Device Marking
Item
BAS40WS
Marking
43
Eqivalent Circuit diagram
1
2
WEITRON
2/3
http://www.weitron.com.tw
30-Apr-09