BAS40W Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40W/-04/-05/-06
Maximum Ratings (T_A=25°C Unless otherwise noted)
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRRM
VR
Forward Continuous Current
IFM
Power Dissipation
P_d
Storage Temperature Range
T_STG
Value
40
200
200
-55 to + 150
Unit
V
mA
mW
°C
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
IR=10µA
Forward Voltage
IF=1mA
IF=40mA
Total Capacitance
(V_R=0V, f=1.0MHz)
V_(BR)R
40
V_F
C_T
Reverse Current
V_R=30V
IR
Reverse Recover Time
I_F=I_R =10mA, I_rr=0.1 x I_R, R_L=100Ω
Trr
Max
0.38
1.00
5.0
0.2
5.0
Unit
V
V
PF
µA
nS
Device Marking
Item
BAS40W
BAS40W-04
BAS40W-05
BASW40-06
WEITRON
http://www.weitron.com.tw
Marking
43h
44
45
46
2/3
Eqivalent Circuit diagram
3
1
3
1
2
3
1
2
3
1
2
05-Sep-05