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2SC5344 Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor (Audio power amplifier application)
2SC5344
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
IC = 0.1mA, IB = 0
Collector-Base Breakdown Voltage
IC = 10mA, IE = 0
Emitter-Base Breakdown Voltage
IE= 0.01mA, IC =0
Collector Cuto Current
VCB = 35V, IE = 0
Emitter Cuto Current
VEB = 5V, IC = 0
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
30
35
5.0
-
-
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
-
0.1
µA
-
0.1
µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
DC Current Transfer Ration
VCE = 1V, IC = 100mA
VCE(sat)
-
-
0.5
V
hFE
100
-
320
SMALL-SIGNAL CHARACTERISTICS
Transition Frequence
VCE = 5V, IC =10mA, f = 100MHz
Collector Output Capacitance
VCB =10V, IE = 0, f = 1MHz
fT
-
120
-
MHz
Cob
-
13
-
pF
Classification of hFE
Rank
Range
Marking
O
100-200
FAO
Y
160-320
FAY
WEITRON
2/4
http://www.weitron.com.tw
08-Dec-08