2SC4215 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

2SC4215
WEITRON
Maximum Ratings ( TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Value
40
30
Unit
V
V
Emitter-Base Voltage
Collector Current -Continuous
V_EBO
I_C
4
V
20
mA
Collector Power Dissipation
Junction Temperature
Storage Temperature
P_D
100
mW
T_J
150
°C
T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
Parameter
Symbol
Min
Typ
Collector-base breakdown voltage
I_C= 100µA, IE =0
Collector-emitter breakdown voltage
I_C= 1mA, I_B=0
Emitter-base breakdown voltage
I_E = 100µA, IC=0
V _(BR)CBO
40
-
V _(BR)CEO
30
-
V _(BR)EBO
4
-
V_CB =40V, I_E =0
I_CBO
-
-
V_EB =4V, I_C =0
DC current gain
V_CE =6V, I_C = 1mA
Transition frequency
V_CE =6V,I _C =1mA
Reverse transfer capacitance
V_CB =10V, f =1MHz
Collector-base time constant
V _CB =6V,I_C=1mA, f=30MHz
I_EBO
-
h_FE
40
f_T
260
Cre
-
C _C · r_bb
-
-
-
550
0.55
-
V _CC =6V,I _C=1mA,f =100MHz
Power gain
V _CC =6V,I _C=1mA,f =100MHz
CLASSIFICATION OF hFE
Rank
NF
Gpe
R
-
2
17
23
O
Range
Marking
40-80
QR
70-140
QO
Max
Unit
-
V
-
V
-
V
0.1
µA
0.5
µA
200
-
-
MHz
-
pF
25
pS
5
dB
-
dB
Y
120-200
QY
WEITRON
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20-Jan-2011