2SC4083 Datasheet, PDF (2/4 Pages) Weitron Technology – NPN Silicon Transistor

2SC4083
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
Parameter
Symbol
Min
Typ
Collector-base breakdown voltage
I_C=10μA, I _E =0
Collector-emitter breakdown voltage
I_C= 1mA, I_B=0
Emitter-base breakdown voltage
I_E = 10 μA, I_C=0
Collector cut-o current
V_CB =10V, I_E =0
Emitter cut-o current
V_EB =2V, I_C =0
DC current gain
V_CE =10V, I_C = 5mA
Collector-base saturation voltage
I_C=10mA, I_B=5mA
Transition frequency
V_CE =10V,I_C=10mA, f =500MHz
Output capacitance
V_CB =10V,I_E =0, f =1MHz
Collector-base time constant
V _CB =10V,I _C=10mA, f=31.8MHz
Noise gure
V _CE =6V,I _C=2mA,f =500MHz,Rg=50Ω
V _(BR)CBO
20
-
V _(BR)CEO
11
-
V _(BR)EBO
3
-
I_CBO
-
-
I_EBO
-
-
h_FE
56
-
V _CE(sat)
-
-
f_T
-
1.2
Cob
-
-
C _C · r_bb
-
-
NF
-
3.5
WEITRON
Max
Unit
-
V
-
V
-
V
0.5
µA
0.5
µA
270
-
0.5
V
-
GHz
1.5
pF
12
pS
-
dB
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270
WEITRON
2/4
http://www.weitron.com.tw
02-Jun-10