WTX1012 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel ENHANCEMENT MODE POWER MOSFET

WTX1012
N-Channel ENHANCEMENT MODE
POWER MOSFET
P b Lead(Pb)-Free
FEATURES:
* Power Mosfet : 1.8V Rated
* Gate-Source ESD Protected: 2000 V
* High-Side Switching
* Low On-Resistance: 0.7Ω
* Low Threshold: 0.8 V (typ)
* Fast Switching Speed: 10 ns
3
1
2
SC-89
Drain
3
BENEFITS:
* Ease in Driving Switches
* Low-Voltage Operation
* High-Speed Circuits
* Low Battery Voltage Operation
1 (Top View) 2
Gate
Source
APPLICATIONS:
* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T_A = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
6
Continuous Drain Current (T_J = 150 C)^b
Pulsed Drain Current^a
T_A = 25 C
600
500
I_D
T_A = 85 C
400
350
mA
I_DM
1000
Continuous Source Current (diode conduction)^b
I_S
275
250
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
T_A = 25 C
175
T_A = 85 C
90
P_D
T_A = 25 C
275
T_A = 85 C
160
150
80
mW
250
140
Operating Junction and Storage Temperature Range
T_J, T_stg
−55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Device Marking
WTX1012 = A
WEITRON
1/6
http://www.weitron.com.tw
31-Mar-09