WTV3585 Datasheet, PDF (1/8 Pages) Weitron Technology – NAND P-Channel Enhancement Mode POWER MOSFET

N AND P-Channel Enhancement
Mode POWER MOSFET
P b Lead(Pb)-Free
6 DRAIN
Features:
* Low Gate change
* Low On-Resistance
N-CH R_DS(ON)<75mΩ@V_GS = 4.5V
P-CH R_DS(ON)<160mΩ@V_GS = -4.5V
* SOT-8 Package
1 GATE
5 SOURCE
4 DRAIN
3 GATE
2 SOURCE
WTV3585
N-CHANNEL
DRAIN SOURCE VOLTAGE
20 VOLTAGE
DRAIN CURRENT
3.5 AMPERES
P-CHANNEL
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
DRAIN CURRENT
-2.5 AMPERES
6
5
4
1
2
3
TSOP-6
Maximum Ratings (T_A=25˚C Unless Otherwise Specified)
Rating
Symbol
Value
N-Channl P-Channl
Drain-Source Voltage
V_DS
20
-20
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current¹
T_A=25˚C
T_A=75˚C
V_GS
±12
±12
3.5
-2.5
I_D
2.8
-1.97
I_DM
10
-10
Total Power Dissipation
T_A=25˚C
P_D
Maximum Junction-ambient³
R_θJA
Operating Junction Temperature Range
T_J
Storage Temperature Range
T_stg
1.14
110
+150
-55~+150
Unit
V
V
A
A
W
˚C/W
˚C
˚C
Device Marking
WTV3585=3585
WEITRON
http:www.weitron.com.tw
1/8
03-Apr-07