WTS772 Datasheet, PDF (1/5 Pages) Weitron Technology – PNP/NPN Epitaxial Planar Transistors

PNP/NPN Epitaxial Planar Transistors
WTS772
WTS882
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
1. EMITTER ₁
2.
3.
COLLECTOR
BASE
2
3
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Collector Current (Pulse) ⁽¹⁾
Base Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PNP/WTS772 NPN/WTS882
Unit
-30
30
Vdc
-40
40
Vdc
-5.0
5.0
Vdc
-3.0
3.0
Adc
IC (Pulse)
-7.0
7.0
Adc
IB(Pulse)
-0.6
0.6
Adc
PD
0.625
W
Tj
150
C
Tstg
-55 to +150
C
Device Marking
WTS772=B772 , WTS882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/30 Vdc, IB =0)
Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I _C =0)
NOTE: 1.PW 350us, duty cycle 2%
Symbol
Min
Max
V(BR)CEO -30/30
-
V(BR)CBO ^-40/40
-
V(BR)EBO _-5.0/5.0 ^-
ICE0
- ^-1.0/1.0
ICBO
- _-1.0/1.0
IEBO
- _-1.0/1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw