WTP772_08 Datasheet, PDF (1/5 Pages) Weitron Technology – PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-B ase Voltage
Emitter-B ase Voltage
Collector Current (DC)
Collector Current (Pulse)¹
B ase Current
Total Device Dissipation Tc=25°C
T_A=25°C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCB _O
VE _{B O}
IC(DC)
IC (Pulse)
IB (Pulse)
PD
Tj
Tstg
WTP772
1. BASE
2. COLLECTOR
3. EMITTER
123
TO-251
PNP/WTP772
Unit
-30
V
-40
V
-5.0
V
-3.0
A
-7.0
A
-0.6
A
10
1.4
W
150
C
-55 to +150
C
Device Marking
WTP772 = 772
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA , IB=0)
Collector-B ase B reakdown Voltage (IC= -100 µA , IE=0)
Emitter-B ase B reakdown Voltage (IE= -100µA , IC=0)
Collector Cutoff Current (VCB = -30 V , IE=0)
Emitter Cutoff Current (VEB = -3.0 V, I _C =0)
N OT E : 1 . P W 3 8 0 us , duty cycle 2 %
Symbol
Min
Max
Unit
V(B _R)CEO -30
-
V
V(B _{R)CB O} -40
-
V
V(B _{R)EB O -5.0}
-
V
ICBO
IEBO
-
-1.0
µA
-
-1.0
µA
WEITRON
1/5
http://www.weitron.com.tw
12-Mar-08