WTN9973 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount N-Channel Enhancement Mode Power MOSFET

Surface Mount N-Channel
Enhancement Mode Power MOSFET
2,4 DRAIN
WTN9973
DRAIN CURRENT
3.9 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
1
GATE
Features:
*Super high dense cell design for low R_DS(ON)
R_DS(ON)<80mΩ@V_GS=10V
*Simple Drive Requirement
*Low Gate Charge
*SOT-223 Package
3 SOURCE
4
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
SOT-223
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,VGS@10V(TA=25℃)
I_D
,VGS@10V(TA=70℃)
Pulsed Drain Current^1,2
I_DM
Total Power Dissipation(TA=25℃)
Maximum Junction-ambient³
P_D
Rθ_JA
Operating Junction and Storage Temperature Range
T_J, T_stg
Value
60
±20
3.9
2.5
20
2.7
45
-55~+150
Unit
V
A
W
℃/W
℃
Device Marking
WTN9973=9973
WEITRON
1/6
http:www.weitron.com.tw
19-Apr-05