WTN9575 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode Power MOSFET

Surface Mount P-Channel
Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
2,4 DRAIN
WTN9575
DRAIN CURRENT
-4.0 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1
GATE
Features:
* Super high dense cell design for low R_DS(ON)
R_DS(ON) < 90mΩ @ V_GS = -10V
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching
3
SOURCE
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
4
1
2
3
SOT-223
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Drain-Source Voltage
Rating
Symbol
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,VGS@10V(T_A=25°C)
,VGS@10V(T_A=70°C)
I_D
Pulsed Drain Current¹
I_DM
Value
-60
±25
-4.0
-3.2
-20
Total Power Dissipation(T_A=25°C)
Maximum Junction-ambient³
P_D
3.0
R_θJA
45
Operating Junction Temperature Range
T_J
+150
Storage Temperature Range
T_stg
-55 ~ +150
Device Marking
WTN9575 = 9575
Unit
V
V
A
A
W
°C/W
°C
°C
WEITRON
1/6
http:www.weitron.com.tw
18-Jul-07