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| WTN9435 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode Power MOSF ET | |||
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Surface Mount P-Channel
Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
2,4 DRAIN
WTN9435
DRAIN CURRENT
-6.0 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
GATE
Features:
* Super high dense cell design for low RDS(ON)
RDS(ON) < 50mΩ @ VGS = -10V
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching
3
SOURCE
1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
4
12 3
SOT-223
Maximum Ratings(TA=25â Unless Otherwise Specified)
Drain-Source Voltage
Rating
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current3 ,VGS@10V(TA=25°C)
,VGS@10V(TA=70°C)
ID
Pulsed Drain Current1
IDM
Value
-30
±25
-6.0
-4.8
-20
Total Power Dissipation(TA=25°C)
Maximum Junction-ambient3
PD
2.7
RθJA
45
Operating Junction and Storage Temperature Range
TJ,Tstg -55 ~ +150
Unit
V
V
A
A
W
°C/W
°C
Device Marking
WTN9435 = 9435
WEITRON
1/6
http:www.weitron.com.tw
07-Oct-05
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