WTM772 Datasheet, PDF (1/5 Pages) Weitron Technology – PNP/NPN Epitaxial Planar Transistors

PNP/NPN Epitaxial Planar Transistors
WTM772
WTM882
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)⁽¹⁾
Base Current
Total Device Dissipation TA =25 C ⁽²⁾
Total Device Dissipation Tc=25 C ⁽³⁾
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
IC (Pulse)
IB (Pulse)
PD
PD
Tj
Tstg
Device Marking
WTM772=B772 , WTM882=D882
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
PNP/WTM772 NPN/WTM882
Unit
-30
30
Vdc
-40
40
Vdc
-5.0
5.0
Vdc
-3.0
3.0
Adc
-7.0
7.0
Adc
-0.6
0.6
Adc
0.5
W
4
W
150
C
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/100 uAdc, IC=0)
Collector Cutoff Current (VCE= -30/30 Vdc, IB=0)
Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/6.0Vdc, IC=0)
NOTE: 1. Pulse Test: PW 350us, duty cycle 2%
2. Tested in free air condition, without heat-sink.
3. Mounted on a 40 40__1mm__ cerami board.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
Min Max
-30/30
-
-40/40
-
-
-5.0/5.0
- ^-1.0/1.0
- _-1.0/1.0
- _-1.0/1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw