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| WTM669A Datasheet, PDF (1/4 Pages) Weitron Technology – NPN Epitaxial P lanar Transistors | |||
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NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25ËC)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Device Marking
WTM669A=669A
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Tstg
WTM669A
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
Unit
180
V
160
V
5
V
1.5
A
3
1
W
150
ËC
-55 to +150
ËC
ELECTRICAL CHARACTERISTICS(TA=25ËCunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=1mA, IE=0
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
Emitter-Base Breakdown Voltage
IE=1mA, IC=0
Collector Cutoï¬ Current
VCB=160V, IE=0
Symbol
Min
Typ
Max
Unit
BVCBO
180
-
-
V
BVCEO
160
-
-
V
BVEBO
5
-
-
V
ICBO
-
-
10
µA
WEITRON
1/4
http://www.weitron.com.tw
01-Aug-05
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