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| WTM649A Datasheet, PDF (1/4 Pages) Weitron Technology – PNP Epitaxial Pl anar Transistors | |||
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PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25ËC)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Device Marking
WTM649A=649A
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Tstg
WTM649A
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
Unit
-180
V
-160
V
-5
V
-1.5
A
-3
1
W
150
ËC
-55 to +150
ËC
ELECTRICAL CHARACTERISTICS(TA=25ËCunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
IE=-1mA, IC=0
Collector Cutoï¬ Current
VCB=-160V, IE=0
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
Typ
Max
Unit
-180
-
-
V
-160
-
-
V
-5
-
-
V
-
-
-10
µA
WEITRON
1/4
http://www.weitron.com.tw
01-Aug-05
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