WTM2310A Datasheet, PDF (1/5 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
* Simple Drive Requirement.
* Super High Density Cell Design for Extremely Low R_DS(ON).
3 DRAIN
2 SOURCE
WTM2310A
DRAIN CURRENT
5.0 AMPERES
DRAIN SOUCE VOLTAGE
60 VOLTAGE
1
2
3
1. GATE
2. DRAIN
3. SOURCE
SOT-89
Maximum Ratings (T_A=25°C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V_GS
T_A=25°C
T_A=70°C
I_D
I_DM
Total Power Dissipation (T_A=25°C )
P_D
Maximum Junction-Ambient ³
R θJA
Operating Junction Temperature Range
T_J
Storage Temperature Range
Tstg
Note 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on FR4 board, t ≤10sec.
Value
60
±20
5.0
4.0
10
1.50
83.3
-55~+150
-55~+150
Unit
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTM2310A = 2310A
WEITRON
1/5
http://www.weitron.com.tw
04-Feb-10