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| WTM1797 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
FEATURES
* Low saturation voltage
* Excellent DC current gain characteristics
* Complements to 2SC4672
WTM1797
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Symbol Value
Units
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current -Continuous
IC
-2
A
Collector Power dissipation
PC
500
mW
Junction Temperature
TJ
150
â
Storage Temperature
Tstg
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50? A, IE=0
-50
-
-
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA, IB=0
-50
-
-
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50? A, IC=0
-6
-
-
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-
-
-0.1 ? A
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
-0.1 ? A
DC current gain
hFE
VCE=-2V, IC=-500mA
82
-
270
Collector-emitter saturation voltage
VCE(sat) IC=-1A, IB=-50mA
-
-
-0.35
V
Transition frequency
fT
VCE=-2V, IC=-0.5A, f=100MHz
-
200
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
36
-
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
AGP
Q
120-270
AGQ
WEITRON
1/3
http://www.weitron.com.tw
14-Oct-08
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