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| WTM1766 Datasheet, PDF (1/3 Pages) Weitron Technology – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
WTM1766
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Symbol Value
Units
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current -Continuous
IC
2.0
A
Collector Power dissipation
PC
500
mW
Junction Temperature
TJ
150
â
Storage Temperature
Tstg
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=50μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
32
Emitter-base breakdown voltage
V(BR)EBO IE=50μA, IC=0
5
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE(1) VCE=3V, IC=500mA
82
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
TYP MAX UNIT
V
V
V
1
μA
1
μA
390
0.8
V
100
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
DBP
Q
120-270
DBQ
R
180-390
DBR
WEITRON
1/3
http://www.weitron.com.tw
04-Dec-08
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