WTM1624 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Description
The WTM1624 applies to voltage regulators,
relay drivers,lamp drivers,and electrical equipment.
WTM1624
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Features
Adoption of FBET, MBIT processes
Low collector-to-emitter saturation voltage
Fast switching speed
Large current capacity and wide ASO
Absolute Maximum Ratings at TA = 25
Parameter
Sym b ol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
3
A
Collector Current (Pulse) (Note1)
ICP
6
A
Total Power Dissipation
PD
0.5
W
Note 1: Single pulse, PW=10ms
Electrical Characteristics (Ta = 25
Sym b ol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.19
*VBE(sat)
-
0.94
*hFE
100
-
fT
-
150
Cob
-
25
tstg
-
650
tf
-
35
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
IC=10uA , IE=0
-
V
IC=1mA, IB=0
-
V
IE=10uA ,IC=0
1
uA
VCB=40V, IE=0
1
uA
VEB=4V, IC=0
0.5
V
IC=2A, IB=100mA
1.2
V
IC=2A, IB=100mA
560
VCE=2V, IC=100mA
-
MHz VCE=10V, IC=50mA
-
pF
VCB=10V, IE=0, f=1MHz
-
-
ns
ns
See test circuit
*Measured under pulse condition. Pulse widthfi380fls, Duty Cyclefi2%
Classification of hFE
Rank
R
Range
100 - 200
S
140 - 280
T
200 - 400
U
280 - 560
WEITRON
1/4
http://www.weitron.com.tw
28-Dec-07