WTL2622 Datasheet, PDF (1/6 Pages) Weitron Technology – Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement
Mode MOSFET
P b Lead(Pb)-Free
6 DRAIN
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R_DS(ON) < 80mΩ@V_GS=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
1 GATE
2 SOURCE
4 DRAIN
3 GATE
5 SOURCE
WTL2622
DRAIN CURRENT
2.5 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
6
5
4
1
2
3
SOT-26
Maximum Ratings (T_A=25˚C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current¹, V_GS@4.5V, T_A=25˚C
I_D
-Pulsed²
I_DM
Drain-Source Diode Forward Current¹
I_S
Total Power Dissipation¹ (T_A=25˚C)
P_D
Maximum Junction-ambient¹
R_θJA
Operating Junction and Storage Temperature Range
T_J,T_stg
Value
20
±10
2.5
8
1.25
1
125
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTL2622=STS2622
WEITRON
http:www.weitron.com.tw
1/6
19-Sep-05