WTL2602 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1,2,5,6 DRAIN
3
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R_DS(ON) < 34mΩ@V_GS=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
4 SOURCE
WTL2602
DRAIN CURRENT
6.3 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
6
5
4
1
2
3
SOT-26
Maximum Ratings (T_A=25˚C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³, V_GS@4.5V, TA=25˚C
TA=70˚C
I_D
Pulsed Drain Current^1,2
Total Power Dissipation(T_A=25˚C)
Maximum Junction-ambient
Operating Junction and Storage Temperature Range
I_DM
P_D
RθJA
TJ,T_stg
Value
20
±12
6.3
5
30
2
62.5
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTL2602=2602
WEITRON
http:www.weitron.com.tw
1/6
08-Sep-05