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WTD9973 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount N-Channel Enhancement Mode POWER MOSFET
Surface Mount N-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <80mΩ@V GS =10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD9973
DRAIN CURRENT
14 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
4
1 23
1. GATE
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C)
ID
Pulsed Drain Current1
IDM
Total Power Dissipation(TC=25˚C)
PD
Maximum Thermal Resistace Junction-case
RθJC
Maximum Thermal Resistace Junction-ambient
RθJA
Operating Junction and Storage Temperature Range
TJ,Tstg
Value
60
±20
14
9
40
27
4.5
110
-55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
Device Marking
WTD9973=9973
WEITRON
1/6
http:www.weitron.com.tw
02-Aug-05