WTD9575 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode POWER MOSFET

Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R _DS(ON) <90m Ω@V _GS =-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD9575
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
4
1 ₂₃
1. GATE
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(T_A=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, (V_GS@10V, T_C=25˚C)
, (V_GS@10V, T_C=100˚C)
I_D
Pulsed Drain Current¹
I_DM
Total Power Dissipation(T_C=25˚C)
P_D
Maximum Thermal Resistace Junction-case
R_θJC
Maximum Thermal Resistace Junction-ambient
R_θJA
Operating Junction and Storage Temperature Range
TJ,Tstg
Value
-60
±25
-15
-9.5
-45
36
3.5
110
- 55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
Device Marking
WTD9575=9575
WEITRON
1/6
http:www.weitron.com.tw
01-Aug-05