WTD772 Datasheet, PDF (1/5 Pages) Weitron Technology – PNP/NPN Epitaxial Planar Transistors

PNP/NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-E m itter Voltage
Collector-B as e Voltage
E m itter-B as e Voltage
Collector Current (DC)
Collector Current (P ulse) ⁽¹⁾
B ase Current
Total Device Dis s ipation Tc=2 5° C
T_A=2 5° C
J unction Tem perature
S torage, Tem perature
Symbol
VCEO
VCB _O
VE _{B O}
IC(DC)
IC (P uls e)
IB (P ulse)
PD
Tj
Ts tg
WTD772
WTD882
TO-252/D-PAK
1. BASE
2. COLLECTOR
3. EMITTER
23
1
PNP/WTD772 NPN/WTD882
Unit
-3 0
30
Vdc
-4 0
40
Vdc
-5 . 0
5.0
Vdc
-3 . 0
3.0
Adc
-7 . 0
7.0
Adc
-0 . 6
0.6
Adc
10
1.4
W
150
C
-5 5 to +1 5 0
C
Device Marking
WTD772=B 772 , WTD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-E m itter B reakdown Voltage (IC= -1 0 / 1 0 m Adc, IB =0 )
Collector-B as e B reakdown Voltage (IC= -1 0 0 / 1 0 0 µAdc, IE =0 )
E m itter-B as e B reakdown Voltage (IE = -1 0 0 / 1 0 0 µAdc, IC=0 )
Collector Cutoff Current (VCE = -3 0 / 3 0 Vdc, I _B =0 )
Collector Cutoff Current (VCB = -4 0 / 4 0 Vdc, IE =0 )
E mitter Cutoff Current (VE _B = -6 . 0 / 6 . 0 Vdc, I _C =0 )
N OT E : 1 . P W 3 5 0 us , duty cycle 2 %
WEITRON
http://www.weitron.com.tw
Symbol
Min
Max
V(B _{R )CE O} -3 0 / 3 0
-
V(B _{R )CB O} ^{-4 0 / 4 0}
-
-
V(B _{R )E B O -5 . 0 / 5 . 0}
ICE0
- ^{-1 .0 / 1 .0}
ICB _O
- _{-1 .0 / 1 .0}
IE _{B O}
- _{-1 .0 / 1 .0}
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc