WTD40N03 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode POWER MOSFET

Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
Features:
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R _DS(ON) <90m Ω@V _GS =-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD40N03
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
4
1. GATE
1
23
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(T_a=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (V_GS@10V, T_C=25˚C)
, (V_GS@10V, T_C=100˚C)
Pulsed Drain Current¹
Total Power Dissipation(T_C=25˚C)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJC
R_θJA
TJ,Tstg
Value
30
±20
-20
-13
150
50
2.5
110
- 55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
WEITRON
1/6
http:www.weitron.com.tw
12-Jul-07