WTC9435 Datasheet, PDF (1/4 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

WTC9435
P-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
* Super High Dense Cell Design For Low R_DS(on)
R_DS(on) < 100mΩ @ VGS = -4.5V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
3 DRAIN
2
SOURCE
DRAIN CURRENT
-5.3 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
3
1
2
Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
SOT-23
Maximum Ratings (TA
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
Symbol
V_DS
V_GS
I_D
I_DM
Value
-30
±20
-5.3
-20
Total Power Dissipation (TA=25°C)
(TA=75°C)
PD
2.5
1.2
Maximum Junction-Case
R_θJC
24
Maximum Junction-Ambient²
R_θJA
62.5
Operating Junction Temperature Range
TJ
-55~+150
Storage Temperature Range
Tstg
-55~+150
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Unit
V
V
A
A
W
°C/W
°C/W
°C
°C
Device Marking
WTC9435 = P94
WEITRON
http://www.weitron.com.tw
1/4
17-Aug-09